Smoltek Surpasses 1 Microfarad per Square Millimeter Capacitance Milestone – Proving Commercial Readiness

This press release is an English version of the previously published Swedish version, which has interpretive precedence.

Smoltek Nanotech Holding AB (publ) (“Smoltek” or “the Company”) announces a major technological milestone in CNF-MIM capacitor development, having successfully engineered an advanced dielectric stack composed of zirconium oxide (ZrO₂) and aluminium oxide (Al₂O₃). This breakthrough was achieved through a close collaboration with SkyTech, a Taiwanese leader in Atomic Layer Deposition (ALD) equipment for the semiconductor industry.

The joint development effort, which began at the start of the year, focused on the optimization and evaluation of ALD films deposited by SkyTech on Smoltek’s proprietary CNF-MIM (Carbon Nanofiber–Metal-Insulator-Metal) test capacitor structures. The result is a capacitance density in excess of 1 µF/mm² using an active layer thickness of only 6 µm—corresponding to a volumetric capacitance density exceeding 160 nF/mm²-µm, which is among the highest reported volumetric capacitance density for ultra-thin capacitors in the industry.

“Breaking the 1 µF/mm² barrier is a major milestone for us,” says Dr. Ghavanini CTO of Smoltek. “Our long-term investment in ALD process development is clearly bearing fruit, and SkyTech’s advanced ALD technology has been instrumental in reaching this record-breaking performance.”

He adds: “Our next focus is to transition this breakthrough from the lab to product-level prototypes, with an emphasis on improving yield and improving insulation resistance.”

“We are excited to support Smoltek in pushing the boundaries of capacitor technology,” says George Yi, CEO of SkyTech. “Our collaboration is a great example of how combining materials innovation with advanced ALD process control can unlock entirely new performance levels. We look forward to continuing our work together as Smoltek moves towards product integration.”